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Derginin Adı:
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Theoretical & Applied Science
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Cilt:
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2015/29
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Sayı:
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9
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Makale Başlık:
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EFFECT OF THE DOPING RATE ON THE SHUNT AND SERIES RESISTANCES OF A SILICON SOLAR CELL
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Makale Alternatif Dilde Başlık:
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EFFECT OF THE DOPING RATE ON THE SHUNT AND SERIES RESISTANCES OF A SILICON SOLAR CELL
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Makale Eklenme Tarihi:
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20.12.2015
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Okunma Sayısı:
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3
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Makale Özeti:
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In this study we used a mathematical approach to determine the shunt and series resistances of the parallel vertical junction solar cell. This approach rests primarily on the current-voltage characteristic of the solar cell under a multi-spectral illumination in static regime. Taking ground on a diffusion equation, the current-voltage characteristic is determined, the shunt and series resistance are deducted. The aim of this work is to show the effect of the base doping level on these two parameters. For that to be, we illustrated the profile of these two parameters for various doping rates.
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Alternatif Dilde Özet:
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In this study we used a mathematical approach to determine the shunt and series resistances of the parallel vertical junction solar cell. This approach rests primarily on the current-voltage characteristic of the solar cell under a multi-spectral illumination in static regime. Taking ground on a diffusion equation, the current-voltage characteristic is determined, the shunt and series resistance are deducted. The aim of this work is to show the effect of the base doping level on these two parameters. For that to be, we illustrated the profile of these two parameters for various doping rates.
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