ОСОБЕННОСТИ ФОРМИРОВАНИЯ ПОЛЕВЫХ ТРАНЗИСТОРОВ ШОТТКИ С САМОСОВМЕЩЕННЫМ ЗАТВОРОМ НА ОСНОВЕ НИТРИДА И СИЛИЦИДА ВОЛЬФРАМА
International Journal InternaukaCilt 2018/2, Sayı 2
In this paper, the peculiarities of the technological processes of the formation of Schottky field transistors by arsenidgale technology are considered. Namely the technology of formation of Schottky field transistors with a self-locking gate on the basis of nitride and …