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ОСОБЕННОСТИ ФОРМИРОВАНИЯ ПОЛЕВЫХ ТРАНЗИСТОРОВ ШОТТКИ С САМОСОВМЕЩЕННЫМ ЗАТВОРОМ НА ОСНОВЕ НИТРИДА И СИЛИЦИДА ВОЛЬФРАМА

2018·?????? ???????? ??????????, ??????? ????????? ???????

International Journal Internauka·Cilt 2018/2, Sayı 2

In this paper, the peculiarities of the technological processes of the formation of Schottky field transistors by arsenidgale technology are considered. Namely the technology of formation of Schottky field transistors with a self-locking gate on the basis of nitride and …

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УЛУЧШЕНИЕ ПОВЕРХНОСТНЫХ МЕХАНИЧЕСКИХ ХАРАКТЕРИСТИК ПРОКАТНОГО ИНСТРУМЕНТА МЕТОДОМ ИОННОЙ ИМПЛАНТАЦИИ

2017·??????? ??????????? ?????????, ??????? ?????????? ????????

International Journal Internauka·Cilt 2017/5, Sayı 5

In the work the pig-iron rolls surface was modified by Mo, Cr, N ions by ionic implantation. It is established that superficial coatings CrN and MoN which in 2,5 times accordingly raise superficial hardness prolong service life of the rolling …

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