Arama

ФОТОЧУТЛИВА ГЕТЕРОСТРУКТУРА GATE — НАНОСТРУКТУРОВАНИЙ ДІЕЛЕКТРИК — INSE

2016·Valery N. Katerynchuk, Bohdan V. Kushnir, Zakhar R. Kudrynskyi +2 yazar

International Journal Internauka·Cilt 2016/4, Sayı 4

Heterostructure p-GaTe — n-InSe was prepared by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. Topology of surfaces of GaTe and InSe layered crystals were studied by using AFM-images. It is shown …